? 2004 ixys all rights reserved g = gate c = collector e = emitter symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 28 a i c110 t c = 110c 13 a i d110 t c = 110c (IXGC16N60B2D1 diode) 10 a i cm t c = 25c, 1 ms 100 a ssoa v ge = 15 v, t j = 125c, r g = 22 i cm = 32 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25c 63 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c f c mounting force 11..65/2.5..15 n/lb. v isol isolation voltage; 50/60hz; t = 1minute; rms 2500 v maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 2 g symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 16n60b2 25 a v ge = 0 v 16n60b2d1 50 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 12 a , v ge = 15 v 2.3 v note 2 t j =125c 1.8 v ds99173a(11/04) hiperfast tm igbt b2-class high speed igbt in isoplus220 tm case electrically isolated back surface ixgc 16n60b2 ixgc 16n60b2d1 v ces = 600 v i c25 =28a v ce(sat) = 2.3 v t fi(typ) =80ns d1 g c e isoplus 220 tm (ixgc) isolated back surface* features z dcb isolated mounting tab z ul recognized (e153432) z meets to-273 package outline z high current handling capability z mos gate turn-on - drive simplicity z epoxy meets ul94v-0 flammability classification applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z easy assembly z high power density z very fast switching speeds for high frequency applications e153432 preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixgc 16n60b2 ixgc 16n60b2d1 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 12a; v ce = 10 v, 8 12 s note 2. c ies v ce = 25 v, v ge = 0 v, f = 1 mhz 780 pf c oes 16n60b2 55 pf 16n60b2d1 65 pf c res 19 pf q g i c = 20a, v ge = 15 v, v ce = 0.5 v ces 32 nc q ge 6nc q gc 10 nc t d(on) 25 ns t ri 15 ns t d(off) 70 150 ns t fi 80 150 ns e off 150 260 mj t d(on) 25 ns t ri 18 ns e on 16n60b2 0.38 mj 16n60b2d 1 0.8 mj t d(off) 110 ns t fi 170 ns e off 350 mj r thjc 2.0 k/w r thck 0.25 k/w inductive load, t j = 125c i c = 12a; v ge = 15 v v ce = 400 v; r g = r off = 22 note 1 notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j , or increased r g . 2. pulse test, t < 300 ms, duty cycle d < 2 % reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10 a, v ge = 0 v 2.66 v t j = 125c 1.66 v i rm i f = 12 a; -di f /dt = 100 a/ s, v r = 100 v 2.5 a t rr v ge = 0 v; t j = 125c 110 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 30 ns r thjc 2.5 k/w isoplus220 outline inductive load, t j = 125c i c = 12a; v ge = 15 v v ce = 400 v; r g = r off = 22 note 1 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
|
